features ? high voltage operation (vds=28v) gaas fet ? high gain: 15.5db(typ.) at pout=40dbm(avg.) ? broad frequency range : 2110 to 2170mhz ? high reliability description the FLL21E045IY is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is targeted for high volt age, low current operation in digitally modulated base station. this product is ideally suited for w-cdma and multi-carrier pcs base station amplif iers while offering high gain long term reliability and ease of use. edition 1.1 june 2004 1 FLL21E045IY l,s-band high power gaas fet absolute maximum rating item symbol condition unit drain-source voltage v ds v gate-source voltage v gs v total power dissipation p t w storage temperature t stg - o c channel temperature t ch - o c recommended operating condition (case temperature tc=25 o c) item symbol condition unit dc input voltage v ds v forward gate current i gf r g =2 ? ma reverse gate current i gr r g =2 ? ma channel temperature t ch o c electrical characteristics (case temperature tc=25 o c) min. typ. max. pinch-off voltage v p v ds =5v i ds =75.4ma -0.1 -0.2 -0.5 v gate-source breakdown boltage v gso i gs =-754ua -5 - - v 3rd order intermodulation distortion im 3 --33-30 dbc power gain g p 14.5 15.5 - db drain efficiency d -26- % adjacent channel leakage power ratio aclr - -35 - dbc themal resistance r th chammel to case - 1.7 1.9 o c/w note 1 : im 3 , aclr and gain test conditions as follows im 3 & gain : f 0 =2.1325ghz, f 1 =2.1475ghz w-cdma(3gpp3.4 12-0) bs-1 64ch non clipping modulation measured over 3.84mhz at f 0 -15mhz and f 1 +15mhz. aclr : f 0 =2.1325ghz w-cdma (3gpp3.4 12-00) bs-1 64ch non clipping modulation, measured over 3.84mhz at f 0 +/-5mhz esd note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) case style : iy v ds =28v i ds (dc)=500ma p out =40dbm(avg.) no t e 1 unit item symbol condition limit 200 <28 <176 >-15.9 class iii 2000v ~ t c =25 o c (case temperature) rating 32 -3 92 limit 155 65 to +175
2 output power & drain efficiency vs. input power v ds =28v i ds =500ma f=2.14ghz output power vs. frequency v ds =28v i ds =500ma FLL21E045IY l,s-band high power gaas fet 30 32 34 36 38 40 42 44 46 48 50 18 20 22 24 26 28 30 32 34 36 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 80 90 100 drain efficiency [%] pout d two-carrier imd(aclr) vs. output power v ds =28v i ds =500ma f 0 =2.135, f 1 =2.145ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v i ds =500ma f 0 =2.135ghz w-cdma 3gpp bs-1 64ch modulation 36 38 40 42 44 46 48 50 2.10 2.12 2.14 2.16 2.18 2.20 frequncy [ghz] output power [dbm] pin=22dbm pin=24dbm pin=26dbm pin=28dbm pin=30dbm pin=32dbm -60 -55 -50 -45 -40 -35 -30 -25 24 26 28 30 32 34 36 38 40 42 44 output power[dbm] imd[dbc] 5 10 15 20 25 30 35 40 drain efficiency[%] im3 im5 drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 24 26 28 30 32 34 36 38 40 42 44 output power[dbm] aclr[dbc] 5 10 15 20 25 30 35 40 drain efficiency[%] +/-5mhz +/-10mhz drain efficiency
FLL21E045IY l,s-band high power gaas fet 3 board layout circuit diagram of the board v gs v ds c1 c2 c3 c4 l1 c8 c9x5 r1 c11 c10 c12 c13 c14 r2 c15 c16 c17 c18 r=3.5 t=0.8mm z1, z11 9.00mm x 1.78mm transmission line z2 25.5mm x 1.78mm transmission line z3 7.30mm x 1.78mm transmission line z4 6.00mm x 13.0mm transmission line z5 23.0mm x 0.50mm transmission line z6 3.00mm x 25.0mm transmission line z7 3.00mm x 13.0mm transmission line z8 23.0mm x 1.50mm transmission line z9 7.30mm x 1.78mm transmission line z10 25.5mm x 1.78mm transmission line c1,c2 10pf c3 1.5pf c4 2.0pf c8 1.5pf c9 0.1uf c10,c15 20pf c11,c16 100nf c12,c17 1000pf c13,c14 10uf c18 22uf l1 3.3nf r1 2.0ohm r2 51ohm board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm z1 z2 z3 z4 z5 z6 z7 z8 z9 z10 z11 c1 c3 c8 l11 c9x5 c4 c2 c14 c13 c12 c11 c10 c15 c16 c18 c17 r2 r1
s-parameters @v ds =28v i ds =500ma f=1.0 to 3.0 ghz s11 s22 2. 0ghz 2.1 2.0g h z 25 2.2 2. 2 2.1 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10 s12 s21 0.3 0.15 8 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 2.0ghz 4 2.2 2.1 2.0ghz 2.1 2.2 [ghz] s11(mag) s11(ang) s21(mag) s21(ang) s12(mag) s12(ang) s22(mag) s22(ang) 1 0.961 -176.09 0.475 0.09 0.002 72.44 0.941 -173.21 1.1 0.955 -176.12 0.465 -4.08 0.003 72.31 0.941 -174.11 1.2 0.955 -176.17 0.474 -8.51 0.003 73.23 0.938 -174.90 1.3 0.946 -176.41 0.512 -13.28 0.004 78.24 0.939 -175.61 1.4 0.938 -177.38 0.574 -19.09 0.005 73.43 0.937 -176.50 1.5 0.929 -178.32 0.676 -25.53 0.007 68.02 0.928 -177.31 1.6 0.903 -179.71 0.858 -34.12 0.008 60.18 0.922 -178.49 1.7 0.868 178.18 1.156 -46.13 0.011 51.50 0.901 179.94 1.8 0.802 175.71 1.676 -62.08 0.015 37.37 0.877 178.21 1.9 0.676 173.72 2.636 -86.18 0.022 13.74 0.879 174.82 2 0.482 178.20 4.384 -122.79 0.033 -20.98 0.898 162.03 2.1 0.441 -135.80 6.693 171.86 0.040 -88.96 0.634 102.88 2.11 0.490 -131.54 6.712 162.88 0.039 -97.96 0.560 90.14 2.12 0.540 -130.55 6.645 154.26 0.038 -107.99 0.484 75.71 2.13 0.596 -130.03 6.434 145.37 0.036 -116.93 0.414 58.35 2.14 0.649 -130.79 6.205 136.83 0.034 -127.37 0.353 36.86 2.15 0.692 -132.19 5.853 128.55 0.031 -133.60 0.323 12.79 2.16 0.731 -133.90 5.525 121.00 0.028 -145.32 0.321 -11.35 2.17 0.761 -135.91 5.126 113.86 0.026 -151.02 0.345 -32.46 2.18 0.783 -137.02 4.769 107.68 0.023 -156.69 0.384 -48.97 2.19 0.811 -138.98 4.402 101.97 0.021 -162.23 0.426 -61.84 2.2 0.823 -140.79 4.071 96.45 0.018 -168.12 0.472 -72.06 2.3 0.883 -148.92 1.953 62.43 0.006 140.62 0.742 -115.08 2.4 0.907 -152.47 1.125 44.59 0.003 131.01 0.838 -128.68 2.5 0.919 -154.44 0.742 32.86 0.002 67.07 0.885 -135.53 2.6 0.923 -156.00 0.539 24.36 0.000 145.10 0.909 -139.52 2.7 0.928 -157.30 0.423 17.45 0.001 -166.69 0.920 -141.86 2.8 0.930 -158.48 0.353 10.90 0.002 133.58 0.925 -143.60 2.9 0.929 -159.87 0.310 6.75 0.003 143.82 0.928 -145.78 3 0.925 -161.40 0.292 0.72 0.002 121.54 0.916 -147.36 FLL21E045IY l,s-band high power gaas fet 4
iy package outline FLL21E045IY l,s-band high power gaas fet 5 unit : mm 9.779 34.036 12.7 4.826 4.826 r1.524 3.251 29.50 1.575 0.152 9.98
FLL21E045IY l,s-band high power gaas fet 6 for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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